IXGH40N30S 查看數據表（PDF） - IXYS CORPORATION
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IXGH40N30S Datasheet PDF : 2 Pages
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IXGH 40N30 IXGH 40N30A IXGH 40N30B
IXGH 40N30S IXGH 40N30AS IXGH 40N30BS
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
gfs
IC = IC90; VCE = 10 V,
20 28
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
2500
pF
Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz
210
pF
Cres
60
pF
123
Qg
145 170 nC
Q
ge
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
23 35 nC
Qgc
50 75 nC
Dim. Millimeter
Inches
Min. Max. Min. Max.
td(on)
tri
t
d(off)
Inductive load, T = 25°C
25
ns
A
4.7 5.3 .185 .209
A1
2.2 2.54 .087 .102
J
40
ns
A2
2.2 2.6 .059 .098
IC = IC90, VGE = 15 V,
L = 100 µH,
b
1.0 1.4 .040 .055
40N30
170
ns
b1 1.65 2.13 .065 .084
tfi
Eoff
VCE = 0.8 VCES,
RG = Roff = 1.0 Ω
40N30A
100
ns
40N30B
75
ns
40N30
230
ns
Switching times may
40N30A
120
ns
increase for VCE (Clamp)
40N30B
75
ns
> 0.8 VCES, higher TJ or
40N30
1.6
mJ
increased RG
40N30A
0.75
mJ
b2 2.87
C
.4
D 20.80
E 15.75
e 5.20
L 19.81
L1
∅P 3.55
3.12
.8
21.46
16.26
5.72
20.32
4.50
3.65
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
40N30B
0.3
mJ
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
td(on)
25
ns
S 6.15 BSC
242 BSC
tri
Eon
td(off)
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V,
L = 100 µH
40N30
40
ns
0.3
mJ
250 500 ns
TO-247 SMD Outline
40N30A
150 300 ns
tfi
VCE = 0.8 VCES,
RG = Roff = 1.0 Ω
40N30B
40N30
90 180 ns
350 600 ns
Switching times may
40N30A
220 330 ns
increase for VCE (Clamp)
40N30B
130 230 ns
Eoff
> 0.8 VCES, higher TJ or
40N30
3.3 4.8 mJ
increased RG
40N30A
1.6 2.4 mJ
40N30B
0.6 1.4 mJ
RthJC
R
thCK
Min. Recommended Footprint
(Dimensions in inches and mm)
0.62 K/W
0.25
K/W
1 - Gate
3 - Source (Emitter
2 - Drain (collector) 4 - Drain (collector
Dim.
A
A1
A2
b
b1
C
D
E
e
L
L1
L2
L3
L4
∅P
Q
R
S
Millimeter
Min. Max.
4.83 5.21
2.29 2.54
1.91 2.16
1.14 1.40
1.19 2.13
0.61 0.80
20.80 21.34
15.75 16.13
5.45 BSC
4.90 5.10
2.70 2.90
2.10 2.30
0.00 0.10
1.90 2.10
3.55 3.65
5.59 6.20
4.32 4.83
6.15 BSC
Inches
Min.
Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.024 .031
.819 .840
.620 .635
.215 BSC
.193 .201
.106 .114
.083 .091
.000 .004
.075 .083
.140 .144
.220 .244
.170 .190
.242 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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