IXGX50N60BD1 查看數據表（PDF） - IXYS CORPORATION
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IXGX50N60BD1 Datasheet PDF : 5 Pages
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IXGK 50N60BD1
IXGX 50N60BD1
6
TJ = 125°C
5
4
3
RG = 4.7
12
E(ON)
10
8
E(OFF)
6
2
4
1
2
0
0
0
20
40
60
80
100
IC - Amperes
Figure 7. Dependence of EON and EOFF on IC.
16
IC =25A
VCE = 250V
12
8
4
0
0 20 40 60 80 100 120
Qg - nanocoulombs
Figure 9. Gate Charge
1
6
TJ = 125°C
5
E(ON)
4
3
E(ON)
IC = 100A
12
10
E(OFF)
8
6
2
1
E(ON)
0
0 10
IC = 50A
IC =25A
20 30 40
4 E(OFF)
E(OFF)
2
0
50 60
RG - Ohms
Figure 8. Dependence of EON and EOFF on RG.
600
100
10
TJ = 125°C
RG = 6.2
dV/dt < 5V/ns
1
0.1
0
100 200 300 400 500 600
VCE - Volts
Figure 10. Turn-off Safe Operating Area
0.1
0.01
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
Single pulse
D = Duty Cycle
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Figure 11. IGBT Transient Thermal Resistance
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4-5
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