DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

IXGR50N60C2 查看數據表(PDF) - IXYS CORPORATION

零件编号
产品描述 (功能)
生产厂家
IXGR50N60C2 Datasheet PDF : 6 Pages
1 2 3 4 5 6
HiPerFASTTM
IGBT with Diode
IXGR 50N60C2
IXGR 50N60C2D1
C2-Class High Speed IGBTs
Preliminary Data Sheet
V
CES
IC25
VCE(sat)
t
fi(typ)
= 600 V
= 75 A
= 2.7 V
= 48 ns
Symbol
VCES
V
CGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
P
C
VISOL
TJ
TJM
Tstg
Weight
Test Conditions
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
M
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 10
Clamped inductive load @ VCE 600 V
T
C
= 25°C
50/60 Hz RMS, t = 1m
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600
V
600
V
±20
V
±30
V
75
A
36
A
300
A
ICM = 100
A
200
W
2500
V
-55 ... +150
°C
150
°C
-55 ... +150
°C
5
g
300
°C
Symbol
Test Conditions
V
GE(th)
I
CES
IGES
V
CE(sat)
I
C
=
250
µA,
V
CE
=
V
GE
V =V
CE
CES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
I = 40 A, V = 15 V
C
GE
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
3.0
5.0
V
T=
J
25°C
TJ = 125°C
650 µA
5 mA
±100 nA
T=
J
25°C
TJ = 125°C
2.7
V
1.8
V
ISOPLUS247
(IXGR)
(ISOLATED TAB)
G = Gate
C = Collector
E = Emitter
Features
Very high frequency IGBT and
anti-parallel FRED in one package
Square RBSOA
High current handling capability
MOS Gate turn-on for drive simplicity
Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low IRM
Applications
Switch-mode and resonant-mode
power supplies
Uninterruptible power supplies (UPS)
DC choppers
AC motor speed control
DC servo and robot drives
Advantages
Space savings (two devices in one
package)
Easy to mount with 1 screw
© 2004 IXYS All rights reserved
DS99163(04/04)

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]