IXGR50N60C2 查看數據表（PDF） - IXYS CORPORATION
零件编号
产品描述 (功能)
生产厂家
IXGR50N60C2 Datasheet PDF : 6 Pages
| |||
Symbol
g
fs
C
ies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
ri
t
d(off)
tfi
Eoff
td(on)
tri
E
on
td(off)
tfi
E
off
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
I = 40 A; V = 10 V,
C
CE
Note 1
VCE = 25 V, VGE = 0 V, f = 1 MHz
40 51
S
3700
pF
290
pF
50
pF
IC = 40 A, VGE = 15 V, VCE = 0.5 VCES
138
nC
25
nC
40
nC
Inductive
load,
T
J
=
25°C
I = 40 A, V = 15 V
C
GE
V
CE
=
480
V,
R
G
=
R
off
=
2.0
Ω
Inductive load, TJ = 125°C
IC = 40 A, VGE = 15 V
VCE = 480 V, RG = Roff = 2.0 Ω
18
ns
25
ns
115 150 ns
48
ns
0.38 0.7 mJ
18
ns
25
ns
1.4
mJ
170
ns
60
ns
0.74
mJ
0.62 K/W
0.15
K/W
IXGR 50N60C2
IXGR 50N60C2D1
ISOPLUS 247 Outline
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IRM
trr
RthJC
IF = 60 A, VGE = 0 V,
Note 1
TJ = 150°C
IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C
V = 100 V
R
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
2.1 V
1.4
8.3 A
35
ns
0.85 K/W
Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961
5,237,481 5,381,025
5,187,117 5,486,715
6,404,065B1 6,162,665 6,534,343 6,583,505
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
Share Link: 