IXGR50N60C2 查看數據表（PDF） - IXYS CORPORATION
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IXGR50N60C2 Datasheet PDF : 6 Pages
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IXGR 50N60C2
IXGR 50N60C2D1
160
4000
80
A
TVJ= 100°C
TVJ= 100°C
140
nC VR = 300V
A VR = 300V
120
IF
100
80
60
TVJ= 25°C
TVJ=100°C
TVJ=150°C
3000
Qr
2000
IF=120A
IF= 60A
IF= 30A
60
IRM
40
IF=120A
IF= 60A
IF= 30A
40
1000
20
20
0
0
1
2V
VF
Fig. 18 Forward current IF versus VF
0
100
A/µs 1000
-diF/dt
Fig. 19 Reverse recovery charge Qr
versus -diF/dt
0
0
Fig. 20
200 400 600 A8/0µ0s 1000
-diF/dt
Peak reverse current IRM
versus -diF/dt
2.0
1.5
Kf
1.0
IRM
0.5
Qr
0.0
0
40
80 120 °C 160
TVJ
Fig. 21 Dynamic parameters Qr, IRM
versus TVJ
1
K/W
0.1
ZthJC
0.01
140
ns
130
trr
120
110
TVJ= 100°C
VR = 300V
IF=120A
IF= 60A
IF= 30A
20
V
VFR
15
tfr
10
1.6
µs
tfr
1.2
VFR
0.8
100
90
80
0
Fig. 22
200 400 600 A8/0µ0s 1000
-diF/dt
Recovery time trr versus -diF/dt
5
0.4
TVJ= 100°C
IF = 60A
0
0 200 400
0.0
600 A80/µ0s 1000
diF/dt
Fig. 23 Peak forward voltage VFR and
tfr
versus diF/dt
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
0.3073
0.0055
2
0.3533
0.0092
3
0.0887
0.0007
4
0.1008
0.0399
0.001
0.0001
0.00001
0.0001
0.001
0.01
Fig. 24 Transient thermal resistance junction to case
0.1
DSEP 2x61-06A
s
1
t
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961
5,237,481 5,381,025
5,187,117 5,486,715
6,404,065B1 6,162,665 6,534,343 6,583,505
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
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