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IRHF9230

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

International Rectifier 

PRraed-IirartaiodniaCtiohnaracteristics

IRHF9230

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅

Parameter

100K Rads(Si)1

Min Max

300K Rads (Si)2 Units

Min Max

Test Conditions

BVDSS

VGS(th)

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

-200 —

-200 — V

-2.0 -4.0 -2.0 -5.0

VGS = 0V, ID = -1.0mA

VGS = VDS, ID = -1.0mA

IGSS

IGSS

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

— -100

— 100

— -100 nA

— 100

VGS = -20V

VGS = 20 V

IDSS

Zero Gate Voltage Drain Current

RDS(on) Static Drain-to-Source ➃

—

-25

— -25 µA

VDS=-160V, VGS =0V

—

0.8

—

0.8

Ω

VGS = -12V, ID =-2.4A

On-State Resistance (TO-3)

RDS(on) Static Drain-to-Source ➃

—

0.8

—

0.8

Ω

VGS = -12V, ID =-2.4A

On-State Resistance (TO-39)

VSD

Diode Forward Voltage ➃

—

-5.0

— -5.0 V

VGS = 0V, IS = -4.0A

1. Part number IRHF9230 (JANSR2N7390)

2. Part number IRHF93230 (JANSF2N7390)

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area

Ion

LET

Energy Range

MeV/(mg/cm²)) (MeV) (µm)

VDS(V)

@VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V

Cu

28.0

285 43.0

-200

-200

-200

-200

—

Br

36.8

305 39.0

-200

-200

-125

-75

—

-250

-200

-150

-100

-50

0

0

Cu

Br

5

10

15

20

VGS

Fig a. Single Event Effect, Safe Operating Area

For footnotes refer to the last page

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