K4S161622H-TC80 查看數據表（PDF） - Samsung

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K4S161622H-TC80

16Mb H-die SDRAM Specification

Samsung 

SDRAM 16Mb H-die(x16)

512K x 16Bit x 2 Banks SDRAM

FEATURES

• 3.3V power supply

• LVTTL compatible with multiplexed address

• two banks operation

• MRS cycle with address key programs

-. CAS Latency ( 2 & 3)

-. Burst Length (1, 2, 4, 8 & full page)

-. Burst Type (Sequential & Interleave)

• All inputs are sampled at the positive going edge of the system clock

• Burst Read Single-bit Write operation

• DQM for masking

• Auto & self refresh

• 32ms refresh period (2K cycle)

CMOS SDRAM

GENERAL DESCRIPTION

The K4S161622H is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated

with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/

O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable laten-

cies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

ORDERING INFORMATION

Part NO.

K4S161622H-TC55

K4S161622H-TC60

K4S161622H-TC70

K4S161622H-TC80

MAX Freq.

183MHz

166MHz

143MHz

125MHz

Interface

LVTTL

Package

50pin

TSOP(II)

Organization

1Mx16

Row Address

A0~A10

Column Address

A0-A7

Row & Column address configuration

Rev. 1.5 August 2004

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