K4S161622H-TC80 查看數據表（PDF） - Samsung
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K4S161622H-TC80 Datasheet PDF : 11 Pages
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SDRAM 16Mb H-die(x16)
CMOS SDRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on VDD supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
Symbol
VIN, VOUT
VDD, VDDQ
TSTG
PD
IOS
Value
Unit
-1.0 ~ 4.6
V
-1.0 ~ 4.6
V
-55 ~ +150
°C
1
W
50
mA
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VDD, VDDQ
3.0
3.3
3.6
V
Input logic high votlage
VIH
2.0
3.0
VDDQ+0.3
V
Input logic low voltage
VIL
-0.3
0
0.8
V
Output logic high voltage
VOH
2.4
-
-
V
Output logic low voltage
VOL
-
-
0.4
V
Input leakage current
ILI
-10
-
10
uA
N: ote : 1. VIH (max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include HI-Z output leakage for all bi-directional buffers with Tri-State outputs.
Note
1
2
IOH = -2mA
IOL = 2mA
3
CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)
Pin
Symbol
Min
Clock
CCLK
2
RAS, CAS, WE, CS, CKE, L(U)DQM
CIN
2
Address
CADD
2
DQ0 ~ DQ15
COUT
3
Max
4
4
4
5
Unit
pF
pF
pF
pF
Rev. 1.5 August 2004
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