M366S3253DTS-L1H/C1H 查看數據表（PDF） - Samsung

零件编号

产品描述 (功能)

生产厂家

M366S3253DTS-L1H/C1H

32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD

Samsung 

M366S3253DTS

PC133/PC100 Unbuffered DIMM

DC CHARACTERISTICS

(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)

Parameter

Operating current

(One bank active)

Symbol

Test Condition

Burst length = 1

ICC1 tRC ≥ tRC(min)

IO = 0 mA

Version

Unit Note

-7C -7A -1H -1L

800 720 720 720 mA 1

Precharge standby cur-

rent in power-down mode

ICC2P

ICC2PS

CKE ≤ VIL(max), tCC = 10ns

CKE & CLK ≤ VIL(max), tCC = ∞

16

mA

16

Precharge standby cur-

ICC2N

CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

160

rent in non power-down

mA

mode

ICC2NS

CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

80

Active standby current in

power-down mode

ICC3P

ICC3PS

CKE ≤ VIL(max), tCC = 10ns

CKE & CLK ≤ VIL(max), tCC = ∞

48

mA

48

Active standby current in

ICC3N

CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

240

mA

non power-down mode

(One bank active)

ICC3NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

200

mA

Operating current

(Burst mode)

Refresh current

Self refresh current

IO = 0 mA

ICC4 Page burst

4banks Activated.

tCCD = 2CLKs

ICC5 tRC ≥ tRC(min)

ICC6 CKE ≤ 0.2V

880 880 800 800 mA 1

1,760 1,600 1,520 1,520 mA 2

C

24

mA

L

12

mA

Notes :

1. Measured with outputs open.

2. Refresh period is 64ms.

3. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ).

REV. 0.0 Jan. 2002

Share Link: