K4S561633F 查看數據表（PDF） - Samsung

零件编号

产品描述 (功能)

生产厂家

K4S561633F

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

Samsung 

K4S561633F - X(Z)E/N/G/C/L/F

Mobile-SDRAM

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Voltage on any pin relative to Vss

VIN, VOUT

-1.0 ~ 4.6

Voltage on VDD supply relative to Vss

VDD, VDDQ

-1.0 ~ 4.6

Storage temperature

TSTG

-55 ~ +150

Power dissipation

PD

1.0

Short circuit current

IOS

50

NOTES:

Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

Unit

V

V

°C

W

mA

DC OPERATING CONDITIONS

Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 to 85°C for Extended, -25 to 70°C for Commercial)

Parameter

Symbol

Min

Typ

Max

Unit

Note

Supply voltage

VDD

2.7

3.0

3.6

V

VDDQ

2.7

3.0

3.6

V

Input logic high voltage

VIH

2.2

3.0

VDDQ + 0.3

V

1

Input logic low voltage

VIL

-0.3

0

0.5

V

2

Output logic high voltage

VOH

2.4

-

-

V

IOH = -2mA

Output logic low voltage

VOL

-

-

0.4

V

IOL = 2mA

Input leakage current

ILI

-10

-

10

uA

3

NOTES :

1. VIH (max) = 5.3V AC.The overshoot voltage duration is ≤ 3ns.

2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.

3. Any input 0V ≤ VIN ≤ VDDQ.

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.

4. Dout is disabled, 0V ≤ VOUT ≤ VDDQ.

CAPACITANCE (VDD = 3.0V, TA = 23°C, f = 1MHz, VREF =0.9V ± 50 mV)

Pin

Symbol

Min

Max

Clock

CCLK

2.0

4.0

RAS, CAS, WE, CS, CKE, DQM

CIN

2.0

4.0

Address

CADD

2.0

4.0

DQ0 ~ DQ15

COUT

3.5

6.0

Unit

pF

pF

pF

pF

Note

February 2004

Share Link: