K4S641632K-TUC 查看數據表（PDF） - Samsung

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K4S641632K-TUC

64Mb K-die SDRAM Specification

Samsung 

K4S640832K

K4S641632K

Synchronous DRAM

DC CHARACTERISTICS (x16)

(Recommended operating condition unless otherwise noted, TA = 0 to 70°C for x16 only)

Parameter

Operating current

(One bank active)

Precharge standby current in

power-down mode

Precharge standby current in

non power-down mode

Active standby current in

power-down mode

Active standby current in

non power-down mode

(One bank active)

Operating current

(Burst mode)

Refresh current

Self refresh current

Symbol

Test Condition

ICC1

ICC2P

ICC2PS

ICC2N

ICC2NS

ICC3P

ICC3PS

ICC3N

ICC3NS

ICC4

ICC5

ICC6

Burst length = 1

tRC ≥ tRC(min)

IO = 0 mA

CKE ≤ VIL(max), tCC = 10ns

CKE & CLK ≤ VIL(max), tCC = ∞

CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

CKE ≤ VIL(max), tCC = 10ns

CKE & CLK ≤ VIL(max), tCC = ∞

CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

IO = 0 mA

Page burst

4Banks Activated

tCCD = 2CLKs

tRC ≥ tRC(min)

C

CKE ≤ 0.2V

L

Version

50

60

75

80 70 55

1

1

15

6

3

3

30

25

110 100 85

110 100 85

1

400

Notes : 1. Measured with outputs open.

2. Refresh period is 64ms.

3. K4S641632K-T(U)C

4. K4S641632K-T(U)L

5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ)

Unit Note

mA

1

mA

mA

mA

mA

mA

1

mA

2

mA

3

uA

4

9 of 14

Rev. 1.1 February 2006

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