K4S643232H 查看數據表（PDF） - Samsung
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K4S643232H Datasheet PDF : 12 Pages
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SDRAM 64Mb H-die (x32)
CMOS SDRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on VDD supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
Symbol
VIN, VOUT
VDD, VDDQ
TSTG
PD
IOS
Value
Unit
-1.0 ~ 4.6
V
-1.0 ~ 4.6
V
-55 ~ +150
°C
1
W
50
mA
Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VDD, VDDQ
3.0
3.3
3.6
V
Input logic high voltage
VIH
2.0
3.0
VDDQ+0.3
V
Input logic low voltage
VIL
-0.3
0
0.8
V
Output logic high voltage
VOH
2.4
-
-
V
Output logic low voltage
VOL
-
-
0.4
V
Input leakage current
ILI
-10
-
10
uA
Notes : 1. VIH (max) = 5.6V AC.The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ,
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Note
1
2
IOH = -2mA
IOL = 2mA
3
CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200 mV)
Pin
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
DQ0 ~ DQ31
Symbol
Min
CCLK
-
CIN
-
CADD
-
COUT
-
Max
4
4.5
4.5
6.5
Unit
pF
pF
pF
pF
-8-
Rev. 1.4 August 2004
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