K522H1HACF-B050 查看數據表（PDF） - Samsung

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K522H1HACF-B050

2Gb (128M x16) NAND Flash + 1Gb (64M x16 ) Mobile DDR SDRAM

Samsung 

K522H1HACF-B050

datasheet

5. ORDERING INFORMATION

Samsung

MCP Memory(2chips)

K 5 2 2H 1H A C F - B 0 50

Device Type

NAND + Mobile DDR SDRAM

NAND Density,Organization

2H: 2G, x16

Mobile DDR Density, Organization

1H: 1G, x16

Operating Voltage

A: 1.8V / 1.8V

Rev. 1.0

MCP Memory

Mobile DDR Speed

50 : 400Mbps@CL3

NAND Speed

0: None

Package

B : FBGA(HF, OSP LF)

Version

F : 7th Generation

Flash Block Architecture

C : Uniform Block

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