K6E0808C1E-C 查看數據表（PDF） - Samsung
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K6E0808C1E-C Datasheet PDF : 9 Pages
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K6E0808C1E-C/E-L, K6E0808C1E-I/E-P
For Cisco
CMOS SRAM
WRITE CYCLE*
Parameter
Write Cycle Time
Chip Select to End of Write
Address Setup Time
Address Valid to End of Write
Write Pulse Width(OE High)
Write Pulse Width(OE Low)
Write Recovery Time
Write to Output High-Z
Symbol
tWC
tCW
tAS
tAW
tWP
tWP1
tWR
tWHZ
K6E0808C1E-10
Min
Max
10
-
8
-
0
-
8
-
8
-
10
-
0
-
0
5
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
tDW
5
-
tDH
0
-
tOW
0
-
* The above parameters are also guaranteed at industrial temperature range.
K6E0808C1E-12
Min
Max
12
-
9
-
0
-
9
-
9
-
12
-
0
-
0
6
6
-
0
-
0
-
K6E0808C1E-15
Min
Max
15
-
10
-
0
-
10
-
10
-
15
-
0
-
0
7
7
-
0
-
0
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)
Address
tRC
tAA
Data Out
Previous Valid Data
Valid Data
-5-
Revision 2.0
Feburary 1999
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