K6T1008C2C-F 查看數據表（PDF） - Samsung
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K6T1008C2C-F Datasheet PDF : 10 Pages
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K6T1008C2C Family
PRELIMINARY
CMOS SRAM
128K x8 bit Low Power CMOS Static RAM
FEATURES
• Process Technology: TFT
• Organization: 128K x8
• Power Supply Voltage: 4.5~5.5V
• Low Data Retention Voltage: 2V(Min)
• Three state output and TTL Compatible
• Package Type: 32-DIP-600, 32-SOP-525,
32-TSOP1-0820F/R
GENERAL DESCRIPTION
The K6T1008C2C families are fabricated by SAMSUNG′s
advanced CMOS process technology. The families support
various operating temperature ranges and have various
package types for user flexibility of system design. The fami-
lies also support low data retention voltage for battery back-
up operation with low data retention current.
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range
K6T1008C2C-L
K6T1008C2C-B
K6T1008C2C-P
K6T1008C2C-F
Commercial(0~70°C)
Industrial(-40~85°C)
4.5~5.5V
Speed
55/70ns
70ns
Power Dissipation
Standby
(ISB1, Max)
Operating
(ICC2, Max)
50µA
10µA
50µA
15µA
60mA
PKG Type
32-DIP, 32-SOP
32-TSOP1-F/R
32-SOP
32-TSOP1-F/R
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
A11 1
A9 2
A8 3
N.C 1
32 VCC A13 4
A16 2
31
WE
A15 CS2
5
6
A14 3
30 CS2 A15 7
A12 4
VCC
29 WE N.C
8
9
A7 5
28 A13 A16 10
A6 6
27
A8
A14
A12
11
12
A5 7
26 A9 A7
13
A4 8
A3 9
32-DIP 25
32-SOP 24
A11
A6
A5
OE A4
14
15
16
A2 10
23 A10
A1 11
A0 12
I/O1 13
I/O2 14
I/O3 15
VSS 16
22 CS1
A4
16
21 I/O8 A5
15
20 I/O7 A6
14
A7
13
19
I/O6 A12
12
18 I/O5 A14
11
A16 10
17 I/O4 N.C
9
VCC 8
A15 7
CS2 6
WE 5
A13 4
A8 3
A9 2
A11 1
32-TSOP
Type1 - Forward
32 OE
31 A10
30 CS1
29 I/O8
28 I/O7
27 I/O6
26 I/O5
25 I/O4
24 VSS
23 I/O3
22 I/O2
21 I/O1
20 A0
19 A1
18 A2
17 A3
32-TSOP
Type1 - Reverse
17 A3
18 A2
19 A1
20 A0
21 I/O1
22 I/O2
23 I/O3
24 VSS
25 I/O4
26 I/O5
27 I/O6
28 I/O7
29 I/O8
30 CS1
31 A10
32
OE
Name
Function
CS1,CS2 Chip Select Inputs
OE Output Enable
WE Write Enable Input
A0~A16 Address Inputs
Name
Function
I/O1~I/O8 Data Inputs/Outputs
Vcc Power
Vss Ground
N.C No Connection
A4
A5
A6
A7
A8
A12
A13
A14
A15
A16
I/O1
I/O8
Clk gen.
Row
select
Data
cont
Data
cont
Precharge circuit.
VCC
VSS
Memory array
1024 rows
128×8 columns
I/O Circuit
Column select
A0 A1 A2 A3 A9 A10 A11
CS1
CS2
Control
WE
logic
OE
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2
Revision 2.0
November 1997
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