K6T1008C2E 查看數據表（PDF） - Samsung
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K6T1008C2E Datasheet PDF : 10 Pages
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K6T1008C2E Family
Document Title
128Kx8 bit Low Power CMOS Static RAM
Revision History
Revision No. History
0.0
Design target
1.0
Finalize
- Improve tWP form 55ns to 50ns for 70ns product.
- Remove 55ns speed bin from industrial product.
1.01
Errata correction
2.0
Revise
3.0
Revise
- Add 55ns parts to industrial products.
CMOS SRAM
Draft Data
October 12, 1998
August 30, 1999
Remark
Preliminary
Final
December 1, 1999
February 14, 2000
March 3, 2000
Final
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 3.0
March 2000
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