K6T1008C2E-RB70 查看數據表（PDF） - Samsung
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K6T1008C2E-RB70 Datasheet PDF : 10 Pages
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K6T1008C2E Family
CMOS SRAM
128Kx8 bit Low Power CMOS Static RAM
FEATURES
• Process Technology: TFT
• Organization: 128Kx8
• Power Supply Voltage: 4.5~5.5V
• Low Data Retention Voltage: 2V(Min)
• Three state output and TTL Compatible
• Package Type: 32-DIP-600, 32-SOP-525,
32-TSOP1-0820F/R
GENERAL DESCRIPTION
The K6T1008C2E families are fabricated by SAMSUNG′s
advanced CMOS process technology. The families support
various operating temperature ranges and have various pack-
age types for user flexibility of system design. The families
also support low data retention voltage for battery back-up
operation with low data retention current.
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range Speed
K6T1008C2E-L
K6T1008C2E-B
Commercial(0~70°C)
K6T1008C2E-P
K6T1008C2E-F
Industrial(-40~85°C)
1. The parameters are tested with 50pF test load
4.5~5.5V 551)/70ns
Power Dissipation
Standby
(ISB1, Max)
50µA
Operating
(ICC2, Max)
10µA
50µA
50mA
15µA
PKG Type
32-DIP-600, 32-SOP-525
32-TSOP1-0820F/R
32-SOP -525
32-TSOP1-0820F/R
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
A11 1
A9 2
A8 3
A13 4
N.C 1
32
VCC
WE
CS2
5
6
A16 2
31 A15 A15 7
A14 3
VCC 8
30 CS2 NC 9
A12 4
29 WE A16 10
A14 11
A7 5
28 A13 A12 12
A6
6
32-SOP 27
A8
A7
A6
13
14
A5
7
32-DIP 26
A9 A5
A4
15
16
A4 8
25 A11
A3 9
A2 10
A1 11
A0 12
I/O1 13
I/O2 14
I/O3 15
VSS 16
24 OE
A4 16
23 A10 A5 15
22 CS1 A6 14
A7 13
21 I/O8 A12 12
20
A14
I/O7 A16
11
10
19 I/O6 NC 9
VCC 8
18 I/O5 A15 7
17
I/O4
CS2
WE
6
5
A13 4
A8 3
A9 2
A11 1
32-TSOP
Type1-Forward
32-TSOP
Type1-Reverse
Name
CS1, CS2
OE
WE
I/O1~I/O8
A0~A16
Vcc
Vss
N.C.
Function
Chip Select Input
Output Enable Input
Write Enable Input
Data Inputs/Outputs
Address Inputs
Power
Ground
No Connection
32 OE
31 A10
30 CS1
29 I/O8
28 I/O7
27 I/O6
26 I/O5
25 I/O4
24 VSS
23 I/O3
22 I/O2
21 I/O1
20 A0
19 A1
18 A2
17 A3
17 A3
18 A2
19 A1
20 A0
21 I/O1
22 I/O2
23 I/O3
24 VSS
25 I/O4
26 I/O5
27 I/O6
28 I/O7
29 I/O8
30 CS1
31 A10
32 OE
Clk gen.
Raw
Address
Row
select
I/O1
Data
cont
I/O8
Data
cont
CS1
CS2 Control
WE logic
OE
Precharge circuit.
Memory array
1024 rows
128×8 columns
I/O Circuit
Column select
Column Address
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2
Revision 3.0
March 2000
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