K6T4008C1B 查看數據表（PDF） - Samsung
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K6T4008C1B Datasheet PDF : 9 Pages
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K6T4008C1B Family
Document Title
512Kx8 bit Low Power CMOS Static RAM
Revision History
Revision No. History
0.0
Initial Draft
0.1
Revise
- Changed Operating current by reticle revision
ICC at write : 35mA → 45mA
ICC1 at read/write : 15/35mA → 10/45mA
1.0
Finalize
- Changed Operating current
ICC1 at write : 45mA → 40mA
ICC2; 90mA → 80mA
- Change test load at 55ns : 100pF → 50pF
2.0
Revise
- Change datasheet format
3.0
Revise
- Industrial product speed bin change:70/100ns → 55/70ns
CMOS SRAM
Draft Date
December 7, 1996
Remark
Advance
March 6, 1997
Preliminary
October 9, 1997
Final
February 17, 1998 Final
September 8, 1998 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 3.0
September 1998
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