K6T4008C1C-GP70 查看數據表（PDF） - Samsung
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K6T4008C1C-GP70 Datasheet PDF : 9 Pages
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K6T4008C1C Family
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
Symbol
Vcc
Vss
VIH
VIL
Note:
1. Commercial Product : TA=0 to 70°C, otherwise specified
Industrial Product : TA=-40 to 85°C, otherwise specified
2. Overshoot : VCC+3.0V in case of pulse width ≤ 30ns
3. Undershoot : -3.0V in case of pulse width ≤ 30ns
4. Overshoot and undershoot are sampled, not 100% tested.
Min
4.5
0
2.2
-0.53)
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Typ
Max
5.0
5.5
0
0
-
Vcc+0.52)
-
0.8
Min
Max
-
8
-
10
Unit
V
V
V
V
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Input leakage current
ILI VIN=Vss to Vcc
Output leakage current
ILO CS=VIH or OE=VIH or WE=VIL, VIO=Vss to Vcc
Operating power supply current ICC IIO=0mA, CS=VIL, VIN=VIL or VIH, Read
Average operating current
ICC1
Cycle time=1µs, 100% duty, IIO=0mA
CS≤0.2V, VIN≥0.2V or VIN≥Vcc-0.2V
Min Typ Max Unit
-1
-
1
µA
-1
-
1
µA
-
-
10 mA
-
-
8
mA
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current(CMOS)
ICC2 Cycle time=Min, 100% duty, IIO=0mA, CS=VIL, VIN=VIH or VIL
-
VOL IOL=2.1mA
-
VOH IOH=-1.0mA
2.4
ISB CS=VIH, Other inputs = VIL or VIH
-
K6T4008C1C-L -
ISB1 CS≥Vcc-0.2V, Other inputs=0~Vcc K6T4008C1C-B
-
K6T4008C1C-P -
K6T4008C1C-F -
-
55 mA
-
0.4
V
-
-
V
-
3
mA
-
80
-
20
µA
-
100
-
30
4
Revision 1.0
April 1999
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