K817P3 查看數據表（PDF） - Vishay Semiconductors
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K817P3 Datasheet PDF : 9 Pages
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K817P/ K827PH/ K847PH
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
VR
6
V
Forward current
IF
60
mA
Forward surge current
tp ≤ 10 µs
IFSM
1.5
A
Power dissipation
Pdiss
100
mW
Junction temperature
Tj
125
°C
Output
Parameter
Test condition
Symbol
Value
Unit
Collector emitter voltage
VCEO
70
V
Emitter collector voltage
VECO
7
V
Collector current
IC
50
mA
Collector peak current
tp/T = 0.5, tp ≤ 10 ms
ICM
100
mA
Power dissipation
Pdiss
150
mW
Junction temperature
Tj
125
°C
Coupler
Parameter
Test condition
AC isolation test voltage (RMS) t = 1 min
Total power dissipation
Operating ambient temperature
range
Storage temperature range
Soldering temperature
2 mm from case, t ≤ 10 s
1) Related to standard climate 23/50 DIN 50014
Symbol
VISO 1)
Ptot
Tamb
Tstg
Tsld
Value
5000
250
- 40 to + 100
- 55 to + 125
260
Unit
VRMS
mW
°C
°C
°C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Junction capacitance
Test condition
IF = 50 mA
VR = 0 V, f = 1 MHz
Symbol
Min
Typ.
Max
Unit
VF
1.25
1.6
V
Cj
50
pF
www.vishay.com
2
Document Number 83522
Rev. 1.7, 26-Oct-04
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