K817P9 查看數據表（PDF） - Vishay Semiconductors
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K817P9 Datasheet PDF : 9 Pages
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K817P/ K827PH/ K847PH
Vishay Semiconductors
Switching Characteristics
Parameter
Delay time
Rise time
Fall time
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
Test condition
Symbol
Min
Typ.
Max
Unit
VS = 5 V, IC = 2 mA, RL = 100 Ω
td
3.0
µs
(see figure 1)
VS = 5 V, IC = 2 mA, RL = 100 Ω
tr
(see figure 1)
3.0
µs
VS = 5 V, IC = 2 mA, RL = 100 Ω
tf
(see figure 1)
4.7
µs
VS = 5 V, IC = 2 mA, RL = 100 Ω
ts
0.3
µs
(see figure 1)
VS = 5 V, IC = 2 mA, RL = 100 Ω
ton
6.0
µs
(see figure 1)
VS = 5 V, IC = 2 mA, RL = 100 Ω
toff
5.0
µs
(see figure 1)
VS = 5 V, IF = 10 mA, RL = 1 kΩ
ton
9.0
µs
(see figure 2)
VS = 5 V, IF = 10 mA, RL = 1 kΩ
toff
18.0
µs
(see figure 2)
IF IF
0
RG = 50 W
tp = 0.01
T
tp = 50 Ps
50 W
+5V
IC = 2 mA; adjusted through
input amplitude
100 W
Channel I
Channel II
Oscilloscope
RL = 1 MW
CL = 20 pF
95 10804
Figure 1. Test circuit, non-saturated operation
IF
0
IC
tp
100%
90%
96 11698
t
10%
0
tp
td
tr
ton (= td + tr)
tr
td
ton
pulse duration
delay time
rise time
turn-on time
ts
tf
toff
ts
tf
toff (= ts + tf)
t
storage time
fall time
turn-off time
Figure 3. Switching Times
IF IF = 10 mA
0
+5V
IC
RG = 50 Ω
tp = 0.01
T
tp = 50 µs
95 10843
50 Ω
Channel I
1 kΩ
Channel II
Oscilloscope
RL≥1M Ω
CL ≤ 20 pF
Figure 2. Test circuit, saturated operation
www.vishay.com
4
Document Number 83522
Rev. 1.7, 26-Oct-04
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