K817P6 查看數據表（PDF） - Vishay Semiconductors
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K817P6 Datasheet PDF : 9 Pages
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K817P/ K827PH/ K847PH
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
300
Coupled device
250
200
Phototransistor
150
IR-diode
100
50
0
0
96 11700
40
80
120
Tamb – Ambient Temperature( °C )
Figure 4. Total Power Dissipation vs. Ambient Temperature
10000
1000
VCE = 20 V
IF = 0
100
10
1
0
95 11026
25
50
75
100
Tamb - Ambient Temperature ( ° C )
Figure 7. Collector Dark Current vs. Ambient Temperature
1000
100
10
1
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
96 11862
VF - Forward Voltage ( V )
Figure 5. Forward Current vs. Forward Voltage
100
VCE=5V
10
1
0.1
0.01
0.1
95 11027
1
10
100
IF – Forward Current ( mA )
Figure 8. Collector Current vs. Forward Current
2.0
VCE=5V
IF=5mA
1.5
1.0
0.5
0
–25
95 11025
0
25
50
75
Tamb – Ambient Temperature ( °C )
Figure 6. Relative Current Transfer Ratio vs. Ambient
Temperature
100
20mA
IF=50mA
10
10mA
5mA
1
2mA
1mA
0.1
0.1
95 10985
1
10
100
VCE – Collector Emitter Voltage ( V )
Figure 9. Collector Current vs. Collector Emitter Voltage
Document Number 83522
Rev. 1.7, 26-Oct-04
www.vishay.com
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