K7P401823B 查看數據表（PDF） - Samsung
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K7P401823B Datasheet PDF : 13 Pages
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K7P403623B
K7P401823B
128Kx36 & 256Kx18 SRAM
DC CHARACTERISTICS
Parameter
Average Power Supply Operating Current-x36
(VIN=VIH or VIL, ZZ & SS=VIL)
Average Power Supply Operating Current-x18
(VIN=VIH or VIL, ZZ & SS=VIL)
Power Supply Standby Current
(VIN=VIH or VIL, ZZ=VIH)
Input Leakage Current
(VIN=VSS or VDDQ)
Output Leakage Current
(VOUT=VSS or VDDQ, ZZ=VIH, G=VIH)
Output High Voltage(IOH=-4mA) for VDDQ=3.3V
Output High Voltage(IOH=-4mA) for VDDQ=2.5V
Output Low Voltage(IOL=4mA)
NOTE :1. Minimum cycle. IOUT=0mA.
2. 50% read cycles.
Symbol
IDD65
IDD70
IDD75
IDD65
IDD70
IDD75
ISB
Min
-
-
-
ILI
-1
ILO
-1
VOH1
2.4
VOH2
2.0
VOL
VSS
Max
300
290
280
290
280
270
120
1
1
VDDQ
0.4
Unit
Note
mA
1, 2
mA
1, 2
mA
1
µA
µA
V
V
PIN CAPACITANCE
Input Capacitance
Output Capacitance
Parameter
Symbol
Typ
CIN
-
COUT
-
NOTE : Periodically sampled and not 100% tested.(dV=0V, f=1MHz)
Max
Unit
5
pF
7
pF
Jul. 2003
-6-
Rev 1.1
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