K7P401822M 查看數據表（PDF） - Samsung
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K7P401822M Datasheet PDF : 12 Pages
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K7P403622M
K7P401822M
128Kx36 & 256Kx18 SRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Note
Core Supply Voltage Relative to VSS
VDD
-0.5 to 3.9
V
Output Supply Voltage Relative to VSS
VDDQ
VDD
V
Voltage on any I/O pin Relative to VSS
VTERM
-0.5 to VDD+0.5
V
Maximum Power Dissipation
PD
3
W
Output Short-Circuit Current
IOUT
25
mA
Operating Temperature
TOPR
0 to 70
°C
Storage Temperature
TSTG
-55 to 125
°C
NOTE : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
Parameter
Symbol
Min
Core Power Supply Voltage
VDD
3.15
Output Power Supply Voltage
VDDQ
2.35
Input High Level
VIH
1.7
Input Low Level
VIL
-0.3
PECL Clock Input High Level
VIH-PECL
2.135
PECL Clock Input Low Level
VIL-PECL
1.490
Operating Junction Temperature
TJ
10
Typ
Max
Unit
3.3
3.45
V
2.5
3.45
V
-
VDD+0.3
V
-
0.7
V
-
2.420
V
-
1.825
V
-
110
°C
Note
DC CHARACTERISTICS
Parameter
Average Power Supply Operating Current-x36
(VIN=VIH or VIL, ZZ & SS=VIL)
Average Power Supply Operating Current-x18
(VIN=VIH or VIL, ZZ & SS=VIL)
Power Supply Standby Current
(VIN=VIH or VIL, ZZ=VIH)
Input Leakage Current
(VIN=VSS or VDD)
Output Leakage Current
(VOUT=VSS or VDDQ, ZZ=VIH, G=VIH)
Output High Voltage(IOH=-4mA) for VDDQ=3.3V
Output High Voltage(IOH=-4mA) for VDDQ=2.5V
Output Low Voltage(IOL=4mA)
NOTE :1. Minimum cycle. IOUT=0mA.
2. 50% read cycles.
Symbol
IDD5
IDD6
IDD7
IDD5
IDD6
IDD7
ISB
ILI
ILO
VOH1
VOH2
VOL
Min
-
-
-
-1
-1
2.4
2.0
VSS
Max
650
600
550
600
550
500
60
1
1
VDDQ
0.4
Unit
mA
Note
1, 2
mA
1, 2
mA
1
µA
µA
V
V
-5-
Dec. 1998
Rev 1.0
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