K7N801845M 查看數據表（PDF） - Samsung
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K7N801845M Datasheet PDF : 18 Pages
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K7N803645M
K7N801845M
256Kx36 & 512Kx18 Pipelined NtRAMTM
DC ELECTRICAL CHARACTERISTICS(VDD=2.5V ±5%, TA=0°C to +70°C)
PARAMETER
SYMBOL
TEST CONDITIONS
Input Leakage Current(except ZZ)
IIL VDD=Max ; VIN=VSS to VDD
Output Leakage Current
IOL Output Disabled,
-16
Operating Current
VDD=Max IOUT=0mA
-15
ICC
Cycle Time ≥ tCYC Min
-13
-10
Standby Current
-16
Device deselected, IOUT=0mA,
-15
ISB ZZ≤VIL, f=Max,
All Inputs≤0.2V or ≥ VDD-0.2V
-13
-10
Device deselected, IOUT=0mA, ZZ≤0.2V, f=0,
ISB1
All Inputs=fixed (VDD-0.2V or 0.2V)
Device deselected, IOUT=0mA, ZZ≥VDD-0.2V,
ISB2 f=Max, All Inputs≤VIL or ≥VIH
Output Low Voltage
VOL IOL=1.0mA
Output High Voltage
VOH IOH=-1.0mA
Input Low Voltage
VIL
Input High Voltage
VIH
MIN
-2
-2
-
-
-
-
-
-
-
-
-
-
-
2.0
-0.3*
1.7
Notes : 1. Reference AC Operating Conditions and Characteristics for input and timing.
2. Data states are all zero.
3. In Case of I/O Pins, the Max. VIH=VDDQ+0.3V
MAX
+2
+2
350
320
300
250
70
60
50
40
20
20
0.4
-
0.7
VDD+0.3**
UNIT NOTES
µA
µA
mA 1,2
mA
mA
mA
V
V
V
V
3
VIH
VSS
VSS-0.8V
20% tCYC(MIN)
TEST CONDITIONS
(TA=0 to 70°C, VDD=2.5V ±5%, unless otherwise specified)
PARAMETER
Input Pulse Level
Input Rise and Fall Time(Measured at 20% to 80%)
Input and Output Timing Reference Levels
Output Load
- 10 -
VALUE
0 to 2.5V
1.0V/ns
1.25V
See Fig. 1
November 1999
Rev 3.0
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