K7P323666M-H(G)C30 查看數據表（PDF） - Samsung

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K7P323666M-H(G)C30

1Mx36 & 2Mx18 Synchronous Pipelined SRAM

Samsung 

K7P323666M

K7P321866M

Document Title

1Mx36 & 2Mx18 Synchronous Pipelined SRAM

1Mx36 & 2Mx18 SRAM

Revision History

Rev. No.

Rev. 0.0

History

- Initial Document

Rev. 0.1

- x18 Organization Package Pin Configuration corrected(2T,4T, 6T)

JTAG Instruction Coding 101 changed from Bypass to Private

Rev. 0.2

- Absolute maximum ratings are changed

VDD : 2.815 - > 3.13

- Recommended DC operating conditions are changed

VREF / VCM-CLK : 0.68 - > 0.6, 0.95 - > 0.9

Max VDIF-CLK : VDDQ+0.3 -> VDDQ+0.6

- DC characteristics is changed

ISBZZ : 150 - > 128

- AC Characteristics are changed

TAVKH / TDVKH / TWVKH / TSVKH : 0.4 / 0.5 / 0.5 - > 0.3 / 0.3 / 0.3

TKHAX / TKHDX / TKHWX / TKHSX : 0.5 / 0.5 / 0.5 - > 0.5 / 0.5 / 0.5

Rev. 0.3

- PACKAGE PIN CONFIGURATION are changed

Numbering each SA pins.

Rev. 0.4

- AC Characteristics are changed

TKHQV (-33) : 0.5 - > 0.6

Rev. 0.5

- PIN CAPACITANCE is changed

Add Clock Pin capacitance

Rev. 0.6

- Correct typo

VDD -> VDDQ: in MODE CONTROL at page4

Rev. 1.0

- Fill the themal Data

- Remove 333MHz Bin

Rev. 1.1

- Add Pb free.

Rev. 1.2

- Modify package dimensions

Draft Date

Jan. 2002

Jan. 2002

Feb. 2003

Remark

Advance

Advance

Advance

Feb. 2003

Mar. 2003

May 2003

Sep. 2003

Sep. 2004

Oct. 2005

Dec. 2005

Advance

Advance

Advance

Advance

Final

Final

Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the

right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters

of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.

Dec. 2005

-2-

Rev 1.2

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