K7P323666M-H(G)C30 查看數據表（PDF） - Samsung

零件编号

产品描述 (功能)

生产厂家

K7P323666M-H(G)C30

1Mx36 & 2Mx18 Synchronous Pipelined SRAM

Samsung 

K7P323666M

K7P321866M

PIN CAPACITANCE

Parameter

Input Capacitance

Data Output Capacitance

Clock Capacitance

Symbol

CIN

COUT

CCLK

NOTE : Periodically sampled and not 100% tested.(TA=25°C, f=1MHz)

1Mx36 & 2Mx18 SRAM

Test Condition

VIN=0V

VOUT=0V

VCLK=0V

Min

Max

Unit

-

4

pF

-

5

pF

-

5

pF

DC CHARACTERISTICS

Parameter

Average Power Supply Operating Current-x36

(VIN=VIH or VIL, ZZ & SS=VIL)

Average Power Supply Operating Current-x18

(VIN=VIH or VIL, ZZ & SS=VIL)

Power Supply Standby Current

(VIN=VIH or VIL, ZZ=VIH)

Active Standby Power Supply Current

(VIN=VIH or VIL, SS=VIH, ZZ=VIL)

Input Leakage Current

(VIN=VSS or VDDQ)

Output Leakage Current

(VOUT=VSS or VDDQ, DQ in High-Z)

Output High Voltage(Programmable Impedance Mode)

Output Low Voltage(Programmable Impedance Mode)

Output High Voltage(IOH=-0.1mA)

Output Low Voltage(IOL=0.1MA)

Output High Voltage(IOH=-6mA)

Output Low Voltage(IOL=6mA)

Symbol

IDD30

IDD25

IDD30

IDD25

ISBZZ

ISBSS

ILI

ILO

VOH1

VOL1

VOH2

VOL2

VOH3

VOL3

Min

-

-

-

-

-1

-1

VDDQ/2

VSS

VDDQ-0.2

VSS

VDDQ-0.4

VSS

NOTE :1. Minimum cycle. IOUT=0mA.

2. 50% read cycles.

3. |IOH|=(VDDQ/2)/(RQ/5)±15% @VOH=VDDQ/2 for 175Ω ≤ RQ ≤ 350Ω.

4. |IOL|=(VDDQ/2)/(RQ/5)±15% @VOL=VDDQ/2 for 175Ω ≤ RQ ≤ 350Ω.

5. Programmable Impedance Output Buffer Mode. The ZQ pin is connected to VSS through RQ.

6. Minimum Impedance Output Buffer Mode. The ZQ pin is connected to VSS or VDD.

Max

620

550

570

500

128

200

1

1

VDDQ

VDDQ/2

VDDQ

0.2

VDDQ

0.4

Unit

Note

mA

1, 2

mA

1, 2

mA

1

mA

1

µA

µA

V

3,5

V

4,5

V

6

V

6

V

6

V

6

Dec. 2005

-7-

Rev 1.2

Share Link: