KA1H0265R-TU 查看數據表（PDF） - Fairchild Semiconductor

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KA1H0265R-TU

Fairchild Power Switch(FPS)

Fairchild Semiconductor 

KA1M0265R/KA1H0265R

Electrical Characteristics (SFET part)

(Ta=25°C unless otherwise specified)

Parameter

Drain-Source Breakdown Voltage

Symbol

BVDSS

Zero Gate Voltage Drain Current

IDSS

Static Drain-Source on Resistance (Note)

Forward Transconductance (Note)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn on Delay Time

Rise Time

Turn Off Delay Time

Fall Time

Total Gate Charge

(Gate-Source+Gate-Drain)

Gate-Source Charge

Gate Drain (Miller) Charge

RDS(ON)

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

Note:

1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%

2. S = -1--

R

Condition

Min. Typ. Max. Unit

VGS=0V, ID=50µA

650 -

-

V

VDS=Max., Rating,

VGS=0V

-

- 50 µA

VDS=0.8Max., Rating,

VGS=0V, TC=125°C

-

- 200 µA

VGS=10V, ID=1.0A

- 5.0 6.0 Ω

VDS=50V, ID=1.0A

1.5 2.5 -

S

VGS=0V, VDS=25V,

f=1MHz

- 550 -

- 38 - pF

- 17 -

VDD=0.5BVDSS, ID=2.0A

(MOSFET switching

time are essentially

independent of

operating temperature)

- 20 -

- 15 -

nS

- 55 -

- 25 -

VGS=10V, ID=2.0A,

VDS=0.5BVDSS (MOSFET

-

switching time are

-

essentially independent of

operating temperature)

-

- 35

3

- nC

12 -

3

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