KA5H0165RVN 查看數據表（PDF） - Fairchild Semiconductor

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KA5H0165RVN

Fairchild Power Switch(FPS)

Fairchild Semiconductor 

KA5X0165RXX-SERIES

Electrical Characteristics (SFET Part)

(Ta=25°C unless otherwise specified)

Parameter

Drain-Source Breakdown Voltage

Symbol

BVDSS

Zero Gate Voltage Drain Current

IDSS

Static Drain-Source on Resistance (Note)

Forward Transconductance (Note)

Input Capacitance

RDS(ON)

gfs

Ciss

Output Capacitance

Reverse Transfer Capacitance

Turn on Delay Time

Rise Time

Turn Off Delay Time

Fall Time

Total Gate Charge

(Gate-Source+Gate-Drain)

Gate-Source Charge

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Gate-Drain (Miller) Charge

Qgd

Note:

1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%

2. S = -1--

R

Condition

Min.

VGS=0V, ID=50µA

650

VDS=Max. Rating, VGS=0V -

VDS=0.8Max. Rating,

VGS=0V, TC=125°C

-

VGS=10V, ID=0.5A

-

VDS=50V, ID=0.5A

0.5

-

VGS=0V, VDS=25V,

f=1MHz

-

-

VDD=0.5B VDSS, ID=1.0A

-

(MOSFET switching time is -

essentially independent of -

operating temperature)

-

VGS=10V, ID=1.0A,

VDS=0.5B VDSS (MOSFET

-

switching time is essentially -

independent of operating

temperature)

-

Typ. Max. Unit

-

-

V

-

50 µA

- 200 µA

8 10 Ω

-

-

S

250 -

25 - pF

10 -

12 -

4

-

nS

30 -

10 -

- 21

3

-

nC

9

-

3

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