78M05 查看數據表（PDF） - Fairchild Semiconductor
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78M05 Datasheet PDF : 9 Pages
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Electrical Characteristics
Refer to the test circuits, -40 < TJ < +125°C, IO = 350 mA, VI = 10 V, CI = 0.33 μF, CO = 0.1 μF unless otherwise speci-
fied.(4)
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
VO
ΔVO
ΔVO
IQ
ΔIQ
ΔV/ΔT
VN
RR
VD
ISC
IPK
Output Voltage
Line Regulation(5)
Load Regulation(5)
Quiescent Current
Quiescent Current Change
Output Voltage Drift
Output Noise Voltage
Ripple Rejection
Dropout Voltage
Short-Circuit Current
Peak Current
TJ = +25°C
IO = 5 mA to 350 mA,
VI = 7 V to 20 V
IO = 200 mA
TJ = +25°C
VI = 7 V to 25 V
VI = 8 V to 25 V
IO = 5 mA to 0.5 A, TJ = +25°C
IO = 5 mA to 200 mA, TJ = +25 °C
TJ = +25°C
IO = 5 mA to 350 mA
IO = 200 mA,
VI = 8 V to 25 V
IO = 5 mA
TJ = -40 to +125°C
f = 10 Hz to 100 kHz
f = 120 Hz, IO = 300 mA
VI = 8 V to 18 V, TJ = +25 °C
TJ = +25°C, IO = 500 mA
TJ = +25°C, VI = 35 V
TJ = +25°C
4.8
4.75
5.0
5.00
4.0
-0.5
40
80
2
300
700
5.2
V
5.25
100
mV
50
100
mV
50
6.0
mA
0.5
mA
0.8
mV/°C
μV/Vo
dB
V
mA
mA
Notes:
4. The parameters are guaranteed across the temperature range by characterization.
5. Load and line regulation are specified at constant junction temperature. Change in Vo due to heating effects must be
taken into account separately. Pulse testing with low duty is used.
© 2001 Fairchild Semiconductor Corporation
KA78M05 / LM78M05 / MC78M05 Rev. 2.5
3
www.fairchildsemi.com
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