KDV239 查看數據表（PDF） - KEC
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KDV239 Datasheet PDF : 2 Pages
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SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF RADIO.
FEATURES
ᴌUltra Low Series Resistance : rS=0.44ή(Typ.)
ᴌSmall Package.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
15
150
-55ᴕ150
UNIT
V
ᴱ
ᴱ
KDV239
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
B
G
1
H
2
D
M
M
1. ANODE
2. CATHODE
J
C
I
DIM MILLIMETERS
A
2.50 +_ 0.1
B
1.25+_ 0.05
C
0.90 +_0.05
D 0.30+0.06/-0.04
E
1.70 +_ 0.05
F
MIN 0.17
G
0.126 +_ 0.03
H
0~0.1
I
1.0 MAX
J
0.15 +_0.05
K
0.4 +_0.05
L
2 +4/-2
M
4~6
USC
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Reverse Current
IR
Capacitance
C2V
C10V
Capacitance Ratio
K
Series Resistance
rS
TEST CONDITION
IR=1ỌA
VR=15V
VR=2V, f=1MHz
VR=10V, f=1MHz
C2V/C10V, f=1MHz
VR=1V, f=470MHz
MIN.
15
-
3.8
1.5
2.0
-
TYP.
-
-
4.25
1.75
2.4
0.44
MAX.
-
3
4.7
2.0
-
0.6
UNIT
V
nA
pF
ή
Marking
Type Name
UJ
2001. 6. 11
Revision No : 1
1/2
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