KM416C4000C 查看數據表（PDF） - Samsung
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KM416C4000C Datasheet PDF : 35 Pages
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KM416C4000C, KM416C4100C
TEST MODE CYCLE
Parameter
Symbol
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
RAS pulse width
CAS pulse width
RAS hold time
CAS hold time
Column Address to RAS lead time
CAS to W delay time
RAS to W delay time
Column Address to W delay time
Fast Page mode cycle time
Fast Page mode read-modify-write cycle time
RAS pulse width (Fast Page cycle)
Access time from CAS precharge
OE access time
OE to data delay
OE command hold time
tRC
tRWC
tRAC
tCAC
tAA
tRAS
tCAS
tRSH
tCSH
tRAL
tCWD
tRWD
tAWD
tPC
tPRWC
tRASP
tCPA
tOEA
tOED
tOEH
-5
Min
Max
95
138
55
18
30
55
10K
18
10K
18
55
30
41
78
53
40
81
55
200K
35
18
18
18
CMOS DRAM
-6
Min
Max
115
160
65
20
35
65
10K
20
10K
20
65
35
43
88
58
45
90
65
200K
40
20
18
20
( Note 11 )
Units
Note
ns
ns
ns 3,4,10,12
ns
3,4,5,12
ns
3,10,12
ns
ns
ns
ns
ns
ns
7
ns
7
ns
7
ns
ns
ns
ns
3
ns
ns
ns
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