KM718V089-60 查看數據表（PDF） - Samsung
零件编号
产品描述 (功能)
生产厂家
KM718V089-60 Datasheet PDF : 20 Pages
| |||
KM736V989
KM718V089
512Kx36 & 1Mx18 Synchronous SRAM
DC ELECTRICAL CHARACTERISTICS(VDD=3.3V+0.165V/-0.165V, TA=0°C to +70°C)
PARAMETER
SYMBOL
TEST CONDITIONS
Input Leakage Current(except ZZ)
IIL VDD = Max ; VIN=VSS to VDD
Output Leakage Current
IOL Output Disabled, VOUT=VSS to VDDQ
-54
Operating Current
-60
ICC
Device Selected, IOUT=0mA,
ZZ≤VIL , Cycle Time ≥ tCYC Min
-67
-72
-10
-54
Standby Current
Device deselected, IOUT=0mA,
-60
ISB ZZ≤VIL, f=Max,
-67
All Inputs≤0.2V or ≥ VDD-0.2V
-72
-10
ISB1
Device deselected, IOUT=0mA, ZZ≤0.2V,
f = 0, All Inputs=fixed (VDD-0.2V or 0.2V)
ISB2
Device deselected, IOUT=0mA, ZZ≥VDD-
0.2V, f=Max, All Inputs≤VIL or ≥VIH
Output Low Voltage(3.3V I/O)
VOL IOL=8.0mA
Output High Voltage(3.3V I/O)
VOH IOH=-4.0mA
Output Low Voltage(2.5V I/O)
VOL IOL=1.0mA
Output High Voltage(2.5V I/O)
VOH IOH=-1.0mA
Input Low Voltage(3.3V I/O)
VIL
nput High Voltage(3.3V I/O)
VIH
Input Low Voltage(2.5V I/O)
VIL
Input High Voltage(2.5V I/O)
VIH
MIN
MAX UNIT NOTES
-2
+2
µA
-2
+2
µA
-
450
-
420
-
400
mA 1,2
-
380
-
320
-
130
-
120
-
110
mA
-
90
-
80
-
30
mA
-
30
mA
-
0.4
V
2.4
-
V
-
0.4
V
2.0
-
V
-0.3*
0.8
V
2.0 VDD+0.5** V
3
-0.3*
0.7
V
1.7 VDD+0.5** V
3
Notes : 1. Reference AC Operating Conditions and Characteristics for input and timing.
2. Data states are all zero.
3. In Case of I/O Pins, the Max. VIH=VDDQ+0.3V.
VIH
VSS
VSS-1.0V
20% tCYC(MIN)
TEST CONDITIONS
(VDD=3.3V+0.165V/-0.165V,VDDQ=3.3V+0.165/-0.165V or VDD=3.3V+0.165V/-0.165V,VDDQ=2.5V+0.4V/-0.125V, TA=0to70°C)
PARAMETER
VALUE
Input Pulse Level(for 3.3V I/O)
0 to 3.0V
Input Pulse Level(for 2.5V I/O)
0 to 2.5V
Input Rise and Fall Time(Measured at 20% to 80% for 3.3V I/O)
1.0V/ns
Input Rise and Fall Time(Measured at 20% to 80% for 2.5V I/O)
1.0V/ns
Input and Output Timing Reference Levels for 3.3V I/O
1.5V
Input and Output Timing Reference Levels for 2.5V I/O
VDDQ/2
Output Load
See Fig. 1
- 10 -
December 1999
Rev 1.0
Share Link: 