KM718V089-67 查看數據表（PDF） - Samsung

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KM718V089-67

512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SRAM

Samsung 

KM736V989

KM718V089

512Kx36 & 1Mx18 Synchronous SRAM

Document Title

512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SRAM

Revision History

Rev. No.

History

0.0

Initial draft

0.1

1. Update ICC & ISB values.

0.2

1. Change ISB value from 150mA to 110mA at -67.

2. Change ISB value from 130mA to 90mA at -72 .

3. Change ISB value from 120mA to 80mA at -10 .

0.3

1. Add tCYC 167MHz and 183MHz.

2. Changed DC condition at Icc and parameters

Icc ; from 420mA to 400mA at -67,

from 400mA to 380mA at -72,

from 350mA to 320mA at -10,

1.0

1. Final Spec Release.

Draft Date

Remark

Dec. 29. 1998 Preliminary

May. 27. 1999 Preliminary

Sep. 04. 1999 Preliminary

Nov. 19. 1999 Preliminary

Dec. 08. 1999 Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

-1-

December 1999

Rev 1.0

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