KM718V887 查看數據表（PDF） - Samsung
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KM718V887 Datasheet PDF : 16 Pages
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KM718V887
256Kx18 Synchronous SRAM
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
SYMBOL
RATING
UNIT
Voltage on VDD Supply Relative to VSS
VDD
-0.3 to 4.6
V
Voltage on VDDQ Supply Relative to VSS
VDDQ
VDD
V
Voltage on Input Pin Relative to VSS
VIN
-0.3 to 6.0
V
Voltage on I/O Pin Relative to VSS
VIO
-0.3 to VDDQ+0.5
V
Power Dissipation
PD
1.2
W
Storage Temperature
TSTG
-65 to 150
°C
Operating Temperature
TOPR
0 to 70
°C
Storage Temperature Range Under Bias
TBIAS
-10 to 85
°C
*Note : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING CONDITIONS at 3.3V I/O (0°C≤ TA≤70°C)
PARAMETER
SYMBOL
MIN
Typ.
Supply Voltage
VDD
3.135
3.3
VDDQ
3.135
3.3
Ground
VSS
0
0
MAX
3.6
3.6
0
UNIT
V
V
V
OPERATING CONDITIONS at 2.5V I/O(0°C ≤ TA ≤ 70°C)
PARAMETER
SYMBOL
MIN
Typ.
Supply Voltage
VDD
3.135
3.3
VDDQ
2.375
2.5
Ground
VSS
0
0
MAX
3.6
2.9
0
UNIT
V
V
V
CAPACITANCE*(TA=25°C, f=1MHz)
PARAMETER
Input Capacitance
Output Capacitance
SYMBOL
TEST CONDI-
MIN
CIN
VIN=0V
-
COUT
VOUT=0V
-
*Note : Sampled not 100% tested.
MAX
5
8
UNIT
pF
pF
-6-
December 1998
Rev. 2.0
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