KSA910 查看數據表（PDF） - Fairchild Semiconductor

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KSA910

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

KSA910

Driver Stage Of Audio Amplifier & High

Voltage Switching Applications

• Collector-Emitter Voltage : VCEO= -150V

• Output Capacitance : Cob=5pF (MAX.)

• Complement to KSC2310

1

TO-92L

1. Emitter 2. Collector 3. Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol

Parameter

VCBO

VCEO

VEBO

IC

PC

TJ

TSTG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

Ratings

-150

-150

-5

-50

800

150

-55 ~ 150

Units

V

V

V

mA

mW

°C

°C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol

Parameter

Test Condition

Min. Typ. Max. Units

BVCBO

Collector-Base Breakdown Voltage

IC= -100µA, IE=0

-150

V

BVCEO

Collector-Emitter Breakdown Voltage IC= -5mA, IB=0

-150

V

BVEBO

Emitter-Base Breakdown Voltage

IE= -10µA, IC=0

-5

V

ICBO

Collector Cut-off Current

VCB= -150V, IE=0

-100

nA

hFE

DC Current Gain

VCE= -5V, IC= -10mA

40

240

VCE (sat) Collector-Emitter Saturation Voltage

IC= -10mA, IB= -1mA

-0.8

V

fT

Current Gain Bandwidth Product

VCE= -30V, IC= -10mA

100

MHz

Cob

Output Capacitance

VCB= -10V, IE=0, f=1MHz

5

pF

hFE Classification

Classification

hFE

R

40 ~ 80

O

70 ~ 140

Y

120 ~ 240

©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

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