C2330 查看數據表（PDF） - Fairchild Semiconductor
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C2330 Datasheet PDF : 6 Pages
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Typical Characteristics
20
16
I
B
=
120µA
12
I
B
=
100µA
I
B
=
80µA
8
I
B
=
60µA
IB = 40µA
4
I
B
=
20µA
0
0
20
40
60
80
100
120
V [V], COLLECTOR-EMITTER VOLTAGE
CE
Figure 1. Static Characteristic
10
1
VBE(sat)
IC = 10 IB
0.1
VCE(sat)
0.01
1
10
100
I [mA], COLLECTOR CURRENT
C
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
175
Ta[oC], AMIBIENT TEMPERATURE
Figure 5. Power Derating
©2001 Fairchild Semiconductor Corporation
1000
100
VCE = 10V
10
1
1
10
100
IC[mA], COLLECTOR CURRENT
Figure 2. DC current Gain
100
f = 1MHz
IE = 0
10
1
0.1
1
10
100
VCB[V], COLLECTOR BASE VOLTAGE
Figure 4. Collector Output Capacitance
Rev. A1, June 2001
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