KSC2881 查看數據表（PDF） - Fairchild Semiconductor
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KSC2881 Datasheet PDF : 5 Pages
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July 2005
KSC2881
NPN Epitaxial Silicon Transistor
Power Amplifier
• Collector-Emitter Voltage : VCEO=120V
• Current Gain Bandwidth Productor : fT=120MHz
• Collector Dissipation : PC=1~2W in Mounted on Ceramic Board
• Complement to KSA1201
Marking
1
SOT-89
1. Base 2. Collector 3. Emitter
28
PY
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
IB
Base Current
PC
Collector Power Dissipation
PC*
TJ
Junction Temperature
TSTG
Storage Temperature
* Mounted on Ceramic Board (250mm2 x 0.8mm)
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE (sat)
VBE (on)
fT
Cob
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
IC = 10µA, IB = 0
IE = 1mA, IC = 0
VCB = 120V, IE = 0
VBE = 5V, IC = 0
VCE = 5V, IC = 100mA
IC = 500mA, IB = 50mA
VCE = 5V, IC = 500mA
VCE = 5V, IC = 100mA
VCB = 10V, IE = 0, f = 1MHz
81
WW
Weekly code
Year code
hFE grage
Value
120
120
5
800
160
500
1,000
150
-55 ~ 150
Units
V
V
V
mA
mA
mW
mW
°C
°C
Min.
120
5
80
Typ.
120
Max.
100
100
240
1.0
1.0
30
Units
V
V
nA
nA
V
V
MHz
pF
©2005 Fairchild Semiconductor Corporation
1
KSC2881 Rev. B2
www.fairchildsemi.com
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