C5027F 查看數據表（PDF） - Fairchild Semiconductor
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C5027F Datasheet PDF : 5 Pages
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Typical Characteristics
4.0
3.6
3.2
2.8
2.4
I = 250mA
B
2.0
I = 200mA
B
I = 150mA
1.6
IB = 100mA
B I = 80mA
1.2
IB = 60mA
IIBB
=
=
50mA
40mA
0.8
IB = 30mA
B
0.4
IB = 20mA
I = 10mA
B
0.0
IB = 0
0
1
2
3
4
5
6
7
8
9
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
10
1
VBE(sat)
0.1
VCE(sat)
I =5I
C
B
0.01
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
VCC = 400V
tSTG
5.IB1 = -2.5.IB2 = IC
1
tON
tF
0.1
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 5. Switching Time
©2002 Fairchild Semiconductor Corporation
1000
100
V = 5V
CE
10
1
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
V = 5V
CE
0.2
0.4
0.6
0.8
1.0
1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
100
I MAX.(Pulse)
C
10
I MAX(Continuous)
C
100µs
1
DC
0.1
0.01
1E-3
1
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
10000
Figure 6. Safe Operating Area
Rev. B1, December 2002
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