KSC5302DM 查看數據表（PDF） - Fairchild Semiconductor

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KSC5302DM

NPN Silicon Transistor

Fairchild Semiconductor 

KSC5302DM

High Voltage & High Speed

Power Switch Application

Equivalent Circuit

C

• High breakdown Voltage :BVCBO=800V

• Built-in Free-wheeling Diode makes efficient anti saturation operation

• Suitable for half bridge light ballast Applications

B

• No need to interest an hFE value because of low variable storage-time

spread even though corner spirit product

• Low base drive requirement

1

TO-126

E 1. Emitter 2.Collector 3.Base

NPN Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol

Parameter

VCBO

VCEO

VEBO

IC

ICP

IB

IBP

PC

TJ

TSTG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

*Collector Current (Pulse)

Base Current (DC)

*Base Current (Pulse)

Power Dissipation(TC=25°C)

Junction Temperature

Storage Temperature

Thermal Characteristics TC=25°C unless otherwise noted

Symbol

Characteristics

Rθjc

Thermal Resistance

Junction to Case

Rθja

Junction to Ambient

Value

800

400

12

2

5

1

2

25

150

- 55 ~ 150

Units

V

V

V

A

A

A

A

W

°C

°C

Rating

5.0

62.5

Unit

°C/W

©2002 Fairchild Semiconductor Corporation

Rev. B1, December 2002

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