KSC5305D(2010) 查看數據表（PDF） - Fairchild Semiconductor
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KSC5305D Datasheet PDF : 7 Pages
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May 2010
KSC5305D
NPN Silicon Transistor
Features
• High Voltage High Speed Power Switch Application
• Built-in Free-wheeling Diode makes efficient anti saturation operation
• Suitable for half bridge light ballast Applications
• No need to interest an hFE value because of low variable storage-time spread even though corner spirit product
• Low base drive requirement
Equivalent Circuit
C
B
1
TO-220
1.Base 2.Collector 3.Emitter
E
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector Base Voltage
VCEO
Collector Emitter Voltage
VEBO
Emitter Base Voltage
IC
Collector Current (DC)
ICP
*Collector Current (Pulse)
IB
Base Current (DC)
IBP
*Base Current (Pulse)
PC
Power Dissipation (TC=25°C)
TJ
Junction Temperature
TSTG
Storage Temperature
* Pulse Test : Pulse Width = 5mS, Duty cycles ≤ 10%
Thermal Characteristics
Symbol
Rθjc
Rθja
Thermal Resistance
Parameter
Junction to Case
Junction to Ambient
Value
800
400
12
5
10
2
4
75
150
- 65 to 150
Units
V
V
V
A
A
A
A
W
°C
°C
Rating
1.65
62.5
Units
°C/W
°C/W
© 2010 Fairchild Semiconductor Corporation
KSC5305D Rev. A2
1
www.fairchildsemi.com
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