KSC5305D(2010) 查看數據表（PDF） - Fairchild Semiconductor

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KSC5305D
(Rev.:2010)

NPN Silicon Transistor

Fairchild Semiconductor 

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol

Parameter

Test Condition

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE1

hFE2

VCE(sat)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

VBE(sat)

Base-Emitter Saturation Voltage

Cob

Output Capacitance

tON

Turn On Time

tSTG

Storage Time

tF

Fall Time

tSTG

Storage Time

tF

Fall Time

VF

Diode Forward Voltage

trr

* Reverse recovery time

(di/dt = 10A/µs)

* Pulse Test : Pulse Width = 5mS, Duty cycles ≤ 10%

IC=1mA, IE=0

IC=5mA, IB=0

IE=1mA, IC=0

VCB=500V, IE=0

VEB= 9V, IC= 0

VCE=1V, IC=0.8A

VCE=1V, IC=2A

IC=0.8A, IB=0.08A

IC=2A, IB=0.4A

IC=0.8A, IB=0.08A

IC=2A, IB=0.4A

VCB=10V, f=1MHz

VCC=300V, IC=2A,

IB1=0.4A, IB2=-1A,

RL=150Ω

VCC=15V, VZ=300V,

IC=2A, IB1=0.4A,

IB2=-0.4A, LC=200µH

IF=1A

IF=2A

IF=0.4A

IF=1A

IF=2A

Min.

800

400

12

-

-

22

8

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Typ.

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Max.

-

-

-

10

10

-

-

0.4

0.5

1.0

1.0

75

150

2

0.2

2.25

150

-

1.5

-

1.6

800

-

1.4

-

1.9

-

Units

V

V

V

µA

µA

V

V

V

V

pF

ns

µs

µs

µs

ns

V

V

ns

µs

µs

© 2010 Fairchild Semiconductor Corporation

KSC5305D Rev. A2

2

www.fairchildsemi.com

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