KSC5338F 查看數據表（PDF） - Fairchild Semiconductor

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KSC5338F

NPN Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

5

I = 1A

B

IB=900mA

I = 800mA

I B = 700mA

4

IBB = 600mA

IB = 500mA

I = 400mA

B

3

IB = 300mA

I = 200mA

B

2

I = 100mA

B

1

IB = 0

0

0

2

4

6

8

10

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

100

VCE = 1V

10

1

0.1

0.01

0.1

1

10

IC[A], COLLECTOR CURRENT

Figure 3. DC current Gain

10

1

VBE(sat)

VCE(sat)

0.1

0.01

0.01

0.1

1

10

IC[A], COLLECTOR CURRENT

Figure 5. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

©2000 Fairchild Semiconductor International

100

VCE = 5V

10

1

0.1

0.01

0.1

1

10

I [A], COLLECTOR CURRENT

C

Figure 2. DC current Gain

10

1

VBE(sat)

0.1

VCE(sat)

I = 10I

C

B

0.01

0.01

0.1

1

10

IC[A], COLLECTOR CURRENT

Figure 4. Base-Emitter Saturation Voltage

Collect-Emitter Saturation Voltage

10

tSTG

1

tF

0.1

0.1

1

10

IC[A], COLLECTOR CURRENT

Figure 6. Switching Time

Rev. A, February 2000

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