KSC5386 查看數據表（PDF） - Fairchild Semiconductor
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KSC5386 Datasheet PDF : 5 Pages
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KSC5386
High Voltage Color Display Horizontal
Deflection Output
(Damper Diode Built In)
Equivalent Circuit
C
• High Collector-Base Breakdown Voltage : BVCBO=1500V B
• High Speed Switching : tF=0.1µs (Typ)
• Wide S.O.A
• For C-Monitor (48KHz)
50Ω typ.
E
NPN Triple Diffused Planar Silicon Transistor
TO-3PF
1
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
1500
800
6
7
16
50
150
~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICES
ICBO
IEBO
hFE
VCE (sat)
VBE (sat)
VF
tF
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Damper Diode Turn On Voltage
Fall Time
VCE = 1400V, RBE = 0
VCB = 800V, IE = 0
VEB = 4V, IC = 0
VCE = 5V, IC = 1.0A
IC = 5A, IB = 1.2A
IC = 5A, IB = 1.2A
IF = 6A
VCC = 200V, IC = 4A, IB1 = 0.8A,
IB2 = -1.6A, RL = 50Ω
Min.
40
8
Typ.
Max.
1
10
250
22
4.2
1.5
2
0.2
Units
mA
µA
mA
V
V
V
µs
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Item
Max
Rθjc
Thermal Resistance, Junction to Case
2.37
Unit
°C/W
©2000 Fairchild Semiconductor International
Rev. B. February 2000
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