KSC5337 查看數據表（PDF） - Inchange Semiconductor
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KSC5337 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSC5337
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB=B 0
VCE(sat)-1 Collector-Emitter Saturation Voltage
VCE(sat)-2 Collector-Emitter Saturation Voltage
VBE(sat)-1 Base-Emitter Saturation Voltage
VBE(sat)-2 Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 1.3A; IB= 0.13A
IC= 3A; IB=B 0.6A
IC= 1.3A; IB= 0.13A
IC= 3A; IB=B 0.6A
VCB= 700V; RBE= 0; IB= 0
IEBO
Emitter Cutoff Current
VEB= 9V; IC=0
hFE-1
DC Current Gain
IC= 0.5A; VCE= 5V
hFE-2
DC Current Gain
IC= 3A; VCE= 1V
COB
Output Capacitance
fT
Current-Gain—Bandwidth Product
IE= 0; VCB= 10V; ftest= 0.1MHz
IC= 0.1A ;VCE= 6V
Switching Times
ton
Turn-On Time
ts
Storage Time
tf
Fall Time
IC= 1A; IB1= -IB2=0.2A;
VCC= 125V
MIN TYP. MAX UNIT
7000
V
400
V
0.5
V
0.7
V
1.1
V
1.25 V
100 μA
10 μA
15
40
6
70
pF
14
MHz
0.2 μs
2.0 μs
0.5 μs
isc Website：www.iscsemi.cn
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