KSH122ITU 查看數據表（PDF） - Fairchild Semiconductor
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KSH122ITU Datasheet PDF : 7 Pages
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Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (TA=25°C)
Junction Temperature
Storage Temperature
Value
100
100
5
8
16
120
20.00
1.75
150
- 65 to 150
Unit
V
V
V
A
A
mA
W
°C
°C
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
VCEO(sus)
Collector-Emitter Sustaining
Voltage(1)
ICEO
ICBO
IEBO
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
hFE
DC Current Gain(1)
VCE(sat)
Collector-Emitter Saturation
Voltage(1)
VBE(sat)
VBE(on)
Cob
Base-Emitter Saturation Voltage(1)
Base-Emitter On Voltage(1)
Output Capacitance
Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
Conditions
IC = 30 mA, IB = 0
VCE = 50 V, IB =0
VCB = 100 V, IE = 0
VEB = 5 V, IC = 0
VCE = 4 V, IC = 4 A
VCE = 4 V, VEB = 8 A
IC = 4 A, IB = 16 mA
IC = 8 A, IB = 80 mA
IC = 8 A, IB = 80 mA
VCE = 4 V, IC = 4 A
VCB = 10 V, IE = 0, f = 0.1 MHz
Min.
100
1000
100
Typ. Max. Unit
V
10
μA
10
μA
2
mA
12000
2
V
4
4.5
V
2.8
V
200 pF
© 2002 Fairchild Semiconductor Corporation
KSH122 / KSH122I Rev. 1.1.0
2
www.fairchildsemi.com
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