KSH32 查看數據表（PDF） - Fairchild Semiconductor
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KSH32 Datasheet PDF : 6 Pages
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KSH32/32C
General Purpose Amplifier Low Speed
Switching Applications
D-PAK for Surface Mount Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP32 and TIP32C
1
D-PAK 1
I-PAK
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
: KSH32
: KSH32C
Value
- 40
- 100
VCEO
Collector-Emitter Voltage
: KSH32
: KSH32C
- 40
- 100
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
-5
-3
-5
-1
15
1.56
150
- 65 ~ 150
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: KSH32
: KSH32C
Test Condition
IC = - 30mA, IB = 0
Min.
-40
-100
ICEO
ICES
IEBO
hFE
Collector Cut-off Current
: KSH32
: KSH32C
Collector Cut-off Current
: KSH32
: KSH32C
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(on)
* Base-Emitter On Voltage
fT
Current Gain Bandwidth Product
* Pulse Test: PW≤300µs, Duty Cycle≤2%
VCE = - 40V, IB = 0
VCE = - 60V, IB = 0
VCE = - 40V, VBE = 0
VCE = - 100V, VBE = 0
VBE = - 5V, IC = 0
VCE = - 4V, IC = - 1A
25
VCE = - 4V, IC = - 3A
10
IC = - 3, IB = - 375mA
VCE = - 4A, IC = - 3A
VCE = -10V, IC = - 500mA
3
Units
V
V
V
V
V
A
A
A
W
W
°C
°C
Max. Units
V
V
-50 µA
-50 µA
-20 µA
-20 µA
-1
mA
50
-1.2
V
-1.8
V
MHz
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
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