KSH32 查看數據表（PDF） - Fairchild Semiconductor

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KSH32

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

1000

100

V = -2V

CE

10

1

-0.01

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

1000

100

10

1

-0.1

-1

-10

-100

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Collector Capacitance

I = 10.I

C

B

1

tSTG

tF, VCC=-30V

tF, VCC(off)=-10V

0.1

-0.01

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

Figure 5. Turn Off Time

©2002 Fairchild Semiconductor Corporation

-10

-1

VBE(sat)

I = 10 I

C

B

-0.1

VCE(sat)

-0.01

-1E-3

-0.01

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

t = 10.I

C

B

1

tR, VCC=-30V

tR, VCC=-10V

0.1

tD, VBE(off)=-2V

-0.01

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

Figure 4. Turn On Time

-10

ICP(max)

IC(max)

-1

1ms

DC

-0.1

-0.01

-1

-10

-100

V [V], COLLECTOR-EMITTER VOLTAGE

CE

-1000

Figure 6. Safe Operating Area

Rev. A4, October 2002

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