AS6UA51216-BI 查看數據表（PDF） - Alliance Semiconductor

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AS6UA51216-BI

1.65V to 3.6V 512K×16 Intelliwatt™ low power CMOS SRAM with one chip enable

Alliance Semiconductor 

AS6UA51216

Write cycle (over the operating range)

–55

Parameter

Symbol Min Max

Write cycle time

tWC

55

–

Chip enable to write end

tCW

40

–

Address setup to write end

tAW

40

–

Address setup time

tAS

0

–

Write pulse width

tWP

35

–

Address hold from end of write

tAH

0

–

Data valid to write end

tDW

25

–

Data hold time

tDH

0

–

Write enable to output in high Z tWZ

0

20

Output active from write end

tOW

5

–

UB/LB low to end of write

tBW

35

–

Shaded areas indicate preliminary information.

–70

Min Max

70

–

60

–

60

–

0

–

55

–

0

–

30

–

0

–

0

20

5

–

55

–

–100

Min Max

100

–

80

–

80

–

0

–

70

–

0

–

40

–

0

–

0

20

5

–

70

–

Write waveform 1 (WE controlled)

Address

CS

LB, UB

tAS

WE

tWC

tCW

tBW

tAW

DIN

DOUT

tWZ

Data undefined

tAH

tWP

tDW

tDH

Data valid

tOW

High Z

Unit Notes

ns

ns

12

ns

ns

12

ns

ns

ns

ns

4, 5

ns

4, 5

ns

4, 5

ns

Write waveform 2 (CS controlled)

Address

CS

LB, UB

WE

DIN

DOUT

tAS

tCLZ

High Z

tWC

tCW

tAH

tAW

tBW

tWP

tWZ

Data undefined

tDW

tDH

Data valid

tOW

High Z

6/27/00

ALLIANCE SEMICONDUCTOR

5

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