DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

L6382D 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
生产厂家
L6382D
ST-Microelectronics
STMicroelectronics ST-Microelectronics
L6382D Datasheet PDF : 21 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical characteristics
L6382D
Symbol Pin
Table 4. Electrical characteristics (continued)
Parameter
Test condition
LSG, HEG and PFG drivers
VOH(LS)
VOL(LS)
5, 9
HIGH output voltage
17
5, 9
LOW output voltage
17
Source current capability
Sink current capability
TRISE
TFALL
Rise time
Fall time
TDELAY
Propagation delay (input to
output)
RB
Pull-down resistor
HSG driver (voltages referred to OUT)
ILSG = IPFG = 10 mA
IHEG = 2.5 mA
ILSG = IPFG = 10 mA
IHEG = 2.5 mA
LSG and PFG
HEG
LSG
HEG
PFG
LSG
HEG
PFG
LSG
HEG
PFG
LSG; high to low and low to
high
HEG; high to low and low to
high
PFG; high to low
PFG; low to high
LSG
HEG
PFG
Min. Typ. Max. Unit
12.5
V
0.5
V
120
mA
50
mA
120
mA
70
250
115
ns
300
ns
60
ns
75
ns
110
ns
40
ns
300 ns
200 ns
250 ns
200 ns
20
K
50
K
10
K
VOH(HS)
12 HIGH output voltage
IHSG = 10 mA
12.5
V
VOL(HS)
12 LOW output voltage
IHSG = 10 mA
0.5
V
12 Sink current capability
120
mA
TRISE
TFALL
12 Source current capability
12 Rise time
12 Fall time
Cload = 1 nF
Cload = 1 nF
120
mA
115
ns
75
ns
8/21
DocID10972 Rev 8

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]